摘要 |
A method of manufacturing a semiconductor device, comprises the process of forming first and second well regions, which are of N-type and P-type, respectively, in a silicon body, forming a base layer of P-type in the first well region, forming an emitter layer of N-type in the base layer, forming source and drain layers of N-type in the second well region, forming a polysilicon emitter electrode on the emitter layer, and ion-implanting impurities of N-type into an interface between the emitter layer and the emitter electrode, so as to break down an insulative layer at the interface.
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