| 摘要 |
PURPOSE:To increase the density of elements by forming a source region, a back gate region and a drain region to an epitaxial layer in succession from a lower section and shaping a self-aligning gate electrode onto one side surface of the epitaxial layer through a gate insulating film and a back gate electrode connected to the back gate region and the drain region onto the other side surface. CONSTITUTION:The upper side surface of a trench is oxidized, and the remainder of the trench is buried with an SiO2 film 15 through a CVD method. An N<+>-type layer 10B in a bottom diffused from an N<+>-type Si substrate layer 1 is used as a source for a MOSFET. An P-type epitaxial layer 10 is employed as a back gate, an N<+>-type layer 10A as a drain, an SiO2 layer 12 as a gate insulating film, an N<+>-type polysilicon layer 13B as a gate electrode and a WSi2 layer 14 as a back gate electrode, and an N channel MOSFET is constituted as a whole. The gate electrode of the N<+>-type polysilicon layer 13B and the back gate electrode of the WSi2 layer 14 are arranged in the same width Wy in a self-alignment manner to the selectively shaped P-type epitaxial layer 10 housing the source, the back gate and the drain. |
