| 摘要 |
PURPOSE:To obtain a fine pattern whose pattern edge is excellent in linearity and whose resist is easily peeled, by interposing a high molecular thin film layer which consists of single or multi layers of high molecular monomolecular films between an ionization radioactive-ray resist and a substrate. CONSTITUTION:A high molecular thin film layer 3 which consists of a high molecular monomolecular film or its accumulative film is formed on a process layer 2 to be etched, and a dry etching-resisting ionization radioactive-ray resist layer 4 is formed thereon to picture a pattern 6. Since scum 7 of the ionization radioactive-ray resist pattern 6 is positioned on the high molecular thin film 3 which is small in its dry etching-resisting performance on a lower layer side, the scum can be easily removed during oxygen plasma etching so that the resist pattern 6 excellent in linearity of its edge can be formed. Since the high molecular thin film layer 3 has high solubility to an organic solvent, the layer 3 can be easily solved and removed only by soaking a pattern-formed substrate 1 into the organic solvent such as ketone, so that the ionization radioactive-ray resist layer 6 can be peeled. |
