| 摘要 |
PURPOSE:To simplify the manufacturing process and to eliminate adverse effects to a semiconductor substrate due to adhesion of dust or contamination, by converting isotropic etching conditions to anisotropic conditions while the substrate is held in an etching system during the etching operation. CONSTITUTION:Photoresist pattern is formed on the surface of an insulation film 2 on a semiconductor substrate 3, so that the pattern is used as a mask for etching. The insulation film 2 is then dry etched isotropically until the configurations as shown in the figure (b) are obtained. During this process, the insulation film 2 is etched from at the aperture of the mask 1 also transversely by dimensions of x(y). Components, flow rate and power of gas supplied to an etching system are varied while the semiconductor substrate 3 is held within the etching system, so that the isotropic etching conditions are converted to anisotropic conditions. The substrate is then etched under these conditions until the configurations as shown in the figure (c) are obtained. Thus, the part A is obtained as a result of the isotropic etching, and the part B is obtained as a result of the anisotropic etching.
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