| 摘要 |
PURPOSE:To prevent pattern defect from being generated in process of formation, by making a continuity part in a conductive layer and a basic layer be selectively heated with energy beams so as to be homogenized with a heated part in the conductive layer or the basic layer. CONSTITUTION:When surface layers of a conductive layer 4, a layer insulating film 3, and a basic layer 1 are fused by radiating laser beams 6 in the range of forming a continuity part 7 and then gradually cooled, growth of silicon single crystal advances from the surface layer via the continuity part 7 during second solidification, and the growth further goes to the fused part of the conductive layer 4 so that single crystal is formed unitedly. Formation of the continuity part 4 is enabled similarly when the basic layer 1 and the conductive layer 4 are made of either single-crystal silicon or polycrystal silicon. Further, the continuity part 7 can be formed of polycrystal silicon. Hence, pattern defect can be prevented to improve yield, and an inexpensive semiconductor device can be obtained by simplifying the process.
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