| 摘要 |
PURPOSE:To form a homogeneous and dense thin carbon film on a substrate at a high rate, by halving a reaction chamber with a plate electrode having a circulating hole, and activating the graphite powder from a graphite target with hydrogen plasma at the time of forming a thin carbon film on the substrate by a reactive sputtering method. CONSTITUTION:The inside of a vacuum chamber 2 is separated by the plate electrode 16 having a circulating port 16a into an A section and a B section. The inside of the A section is evacuated from an exhaust hole 4, and Ar as an inert gas is then introduced from an inlet 3. Meanwhile, a high-frequency voltage is impressed between a target holder 5 and a counter electrode 11, and the graphite target 6 is decomposed and scattered by the plasma of gaseous Ar. Gaseous H2 is simultaneously introduced into the B section from an inlet 20 to produce hydrogen plasma by a high-frequency voltage between the plate electrode 16 and a substrate holder 12, the scattered graphite particles enter the B section from the circulating port 16a and are activated by the hydrogen plasma, the activated particles are uniformly, densely, and firmly adhered onto a substrate 13, and a hard thin carbon film is formed at a high rate.
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