发明名称 |
Stress relief in epitaxial wafers |
摘要 |
The specification describes an epitaxial structure designed to reduce or eliminate the bowing of semiconductor wafers due to stresses caused by lattice mismatch between a heavily boron doped substrate and a lightly doped epitaxial layer. The lattice mismatch is reduced or eliminated by doping germanium into the substrate prior to epitaxial growth.
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申请公布号 |
US4769689(A) |
申请公布日期 |
1988.09.06 |
申请号 |
US19870073296 |
申请日期 |
1987.07.13 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
LIN, WEN |
分类号 |
H01L21/20;(IPC1-7):H01L29/167 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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