| 摘要 |
An electrophotographic photosensitive member comprises a conductive substrate, a blocking layer formed on the conductive substrate, a photoconductive layer, formed on the blocking layer and a surface layer formed on the photoconductive layer. The blocking layer is formed from a microcrystalline silicon, which is made a p-type by being heavily doped with an element of Group III of the Periodic Table. The photoconductive layer is formed from an amorphous silicon which is lightly doped with an impurity element, and which is similar in properties to an intrinsic semiconductor. Rectifying contact is formed between the photoconductive layer and the blocking layer so that a depletion layer is formed by that interface toward the interior of the photoconductive layer. By so doing, it is possible to obtain a photosensitive member having a high sensitivity in the range from visible light to near-infrared light.
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