| 摘要 |
The invention provides a method for manufacturing a semiconductor device, having the steps of: forming a first mask member which has an opening to expose a desired portion of one major surface of a semiconductor substrate; doping an impurity which has the same conductivity type as that of the semiconductor substrate through the opening of the first mask member to form an impurity region of a high concentration in the surface layer of the semiconductor substrate; forming a second mask member on the side surface of the opening of the first mask member while the first mask member is left as it is; forming a groove by selectively etching the semiconductor substrate using the first and second mask members, and at the same time leaving an impurity region of the high concentration at least on the side surface of the groove; and burying an insulating isolation material in the groove. |
