METHOD OF MAKING A TWO-TRANSISTOR MONOLITHIC INTEGRATED MEMORY CELL USING MOS TECHNOLOGY,申请号DE19813176826-传众专利搜索

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发明名称	METHOD OF MAKING A TWO-TRANSISTOR MONOLITHIC INTEGRATED MEMORY CELL USING MOS TECHNOLOGY
摘要
申请公布号	DE3176826(D1)	申请公布日期	1988.09.01
申请号	DE19813176826	申请日期	1981.09.16
申请人	SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN	发明人	SCHEIBE, ADOLF, DR., DIPL.-PHYS.
分类号	H01L21/316;H01L21/82;H01L27/08;(IPC1-7):H01L21/82;H01L29/60	主分类号	H01L21/316
代理机构		代理人
主权项
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