| 摘要 |
1. Process for depositing on a substrate, conductive or not, a thin layer of at least one material from a plasma, of the type consisting in disposing in an enclosure, on the one hand, at least one source of a material to be deposited in thin layer on a substrate and, on the other hand, said substrate, in independently regulating the temperature of the source and of the substrate, in providing means for electrical biassing of the source, in generating in the enclosure a plasma by suitable means for excitation of a reactive gaseous medium with respect to the material of the source in order to create a volatile reaction product, in dissociating and ionizing the latter partially by the plasma and in depositing on the substrate at least one compound issuing from the volatile reaction product, characterized in that : the plasma is contained in the enclosure by a magnetic containment envelope, disposed inside the enclosure and constituted by a multipole cage, the substrate is associated with suitable means for electrical biassing, and the electrical biassings of the source and of the substrate are adjusted independently. |
