| 发明名称 |
HALFGELEIDERINRICHTING, OMVATTENDE EEN HALFGELEIDERLICHAAM MET EEN OP EEN OPPERVLAK VAN HET HALFGELEIDERLICHAAM AANGEBRACHTE PASSIVERINGSLAAG VAN POLYKRISTALLIJN SILICIUM MET 2-45 ATOOM% ZUURSTOF. |
| 摘要 |
A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si3N4, Al2O3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed. |
| 申请公布号 |
NL183260(C) |
申请公布日期 |
1988.09.01 |
| 申请号 |
NL19750012559 |
申请日期 |
1975.10.27 |
| 申请人 |
SONY CORPORATION (SONY KABUSHIKI KAISHA) TE TOKIO, JAPAN. |
发明人 |
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| 分类号 |
H01L21/322;H01L21/314;H01L21/331;H01L21/8247;H01L23/31;H01L29/06;H01L29/73;H01L29/78;H01L29/788;H01L29/792;H01L29/861;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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