发明名称 RESIN COMPOSITION FOR PATTERN FORMATION
摘要 PURPOSE:To increase the film forming, the heat-resisting and the dry-etching properties of the titled composition, and to improve the adhesion to a silicon wafer and the brittleness of the titled composition by incorporating a high mol.wt. novolak resin in the titled composition. CONSTITUTION:The titled composition contains the high mol.wt. novolak resin and 1,2-quinone diazide compd. The usable high mol.wt. novolak resin is produced by condensing phenol and formaldehyde in the presence of an acidic catalyst, such as hydrochloric acid, nitric acid, sulfuric acid, toluene sulfonic acid, and oxalic acid, etc. The usable 1,2-quinone diazide compd. is exemplified by 1,2-benzoquinone diazidosulfonic acid ester, etc. At the resin composition for forming pattern 1,2-quinone diazide compd. is photodecomposed by photoirradiating and by dipping the photodecomposed part of said compd. in a solvent, namely, a developer, the pattern is formed.
申请公布号 JPS63210923(A) 申请公布日期 1988.09.01
申请号 JP19870044783 申请日期 1987.02.27
申请人 NIPPON STEEL CHEM CO LTD 发明人 YAMAOKA TSUGIO;AOI HARUHIKO;YOSHIMOTO YASUBUMI
分类号 G03C1/72;G03F7/023 主分类号 G03C1/72
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