| 摘要 |
PURPOSE:To form thin hydrogenated amorphous carbon films simultaneously on the surfaces of many substrates at a high speed, by providing a graphite target and a counter electrode in a vacuum chamber and substrate holding parts to specific position therein, maintaining a gaseous mixture atmosphere composed of He and H2 in the chamber and sputtering the target. CONSTITUTION:The graphite target 4 and the 1st substrate holding part 5 in common use as the electrode facing the target are placed in the vacuum chamber 1. A high-frequency voltage is impressed between both from a power supply 6. The 2nd substrate holding parts 8 are provided on both sides of the target 4 and the 1st substrate holding part 5 in common use as the counter electrode. The 3rd substrate holding parts 9 are disposed behind the counter electrode 5. Substrates 10 for vapor deposition are mounted to the respective substrate holding parts. The atmosphere of 1.3-665Pa having 3-95% ratio of He/(H2+ He) is maintained in the vacuum chamber 1 and the substrates 10 are heated to <=250 deg.C and subjected to a treatment by a reactive sputtering method, by which the hydrogenated amorphous carbon films re formed at a high speed on the surfaces of the substrates 10.
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