发明名称 |
CONDUCTIVITY-ENHANCED COMBINED LATERAL MOS/BIPOLAR TRANSCONDUCTIVITY-ENHANCED COMBINED LATERAL MOS/BIPOLAR TRANSISTOR ISTOR |
摘要 |
A semiconductor device comprising a combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer (16) of the same conductivity type as the channel region (20), which layer extends laterally from the channel region to beneath the drain contact region (24) of the device. Additionally, a floating semiconductor layer (14) of opposite conductivity type to that of the channel region (20) is provided between the intermediate layer (16) and the substrate (12) of the device. Both the intermediate layer (16) and the substrate (12) are relatively lightly doped, to effectively isolate the floating layer (14) from above and below. This structure substantially improves the operating characteristics of the device, thus permitting operation in both the source-follower and common-source modes, while also providing a compact structure which features a relatively low normalized "on" resistance. |
申请公布号 |
EP0185415(A3) |
申请公布日期 |
1988.08.31 |
申请号 |
EP19850201953 |
申请日期 |
1985.11.26 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
JAYARAMAN, RAJSEKAR;SINGER, BARRY MANA |
分类号 |
H01L21/331;H01L21/8249;H01L27/06;H01L27/07;H01L29/10;H01L29/73;H01L29/735;H01L29/739;H01L29/78 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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