发明名称 Vertical apparatus for heat treating a semiconductor substrate
摘要 A vertical apparatus for heat treating a semiconductor apparatus which is provided with an opening at one end, wherein the opening of a reactor provided with a reaction gas inlet and outlet is fitted with a cap which is designed to be tightly fitted to or removed from the reactor opening, a boat rest is mounted on the cap, when the cap shuts the reactor opening, the reaction gas drawn off from the inlet is carried to the outside through the outlet, when the cap is removed from the reactor opening, a gas is carried from the inlet provided in the boat rest to the outlet at the predetermined rate, and the gas passing through the gas introducing passage and gas-discharging passage provided in the boat rest prevents the open air from flowing backward into the reactor opening.
申请公布号 US4766678(A) 申请公布日期 1988.08.30
申请号 US19870087806 申请日期 1987.08.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YANASE, TOSHINOBU
分类号 H01L21/31;H01L21/00;H01L21/205;H01L21/22;(IPC1-7):F26B19/00 主分类号 H01L21/31
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