SEMICONDUCTOR LASER WITH LATERAL INJECTION

摘要

In a semiconductor laser with iso-electronic doping or with a quantum-well structure the efficiency is considerably increased by lateral injection. For this purpose, the active region (3) is composed of active layers (4) and barrier layers (5) which are laterally bounded by semiconductor zones (6, 7), preferably degenerate, which inject charge carriers in the longitudinal direction of the active layers (4). The population inversion in the active layers (4) is further increased in that superinjection occurs at the transition with the degenerate zones (6, 7).