| 摘要 |
PURPOSE:To obtain an information recording medium which has high stability of recording and recording level and obviates generation of defective initialization and partial erasing by forming a recording layer of an alloy having a compsn. expressed by In50Sb50-xMx where M is an element belonging to a group IIB and (x) is larger than 0 and below 15atom.%. CONSTITUTION:This information recording medium has a substrate 11 and the recording layer 13 to and from which information is recorded and erased by the phase change which takes place when a light beam 18 is projected thereon. When the light beam is projected on the recording layer of such recording medium, the alloy of the compsn. expressed by In50Sb50-xMx separates to In50-xSb50-x and InxMx where InxMx exists by being dispersed into the stable crystalline In50-xSb50-x; in addition, this InxMx is stable in the amorphous state and, therefore, the stability of the recording is high. The InxMx generated by the phase sepn. causes the phase change between the crystalline phase and the amorphous phase by changing the conditions for projecting the light beam and, therefore, the high recording level is obtainable. Since the phase change rate of this InxMx is high, the initialization and erasing are speeded up and the defective initialization and partial erasing are suppressed. |
