| 摘要 |
PURPOSE:To contrive reduction in rise time when various kinds of thyristors are turned ON by a method wherein, for the ON gate electrode (first electrode) on the side of the main junction, a trigger signal is given first to the ON gate electrode (second gate electrode) which is directly contacted to the first base layer on the further side from the main junction. CONSTITUTION:The first gate electrode 6 is provided on the second base layer 4 located on the second emitter side close to the main junction and the double gate structure, in which the second gate electrode 9 is provided on the first base layer 3 located on the side of the main junction, is formed. When a thyristor is going to be turned ON, a trigger signal with which between the first emitter layer 1 and the first base layer 3 will be forward-biased is applied to the second gate electrode 9, which is on the further side from the main junction, before application of the turn ON trigger signal to the first gate electrode 6 on the side of the main junction. As a result, when the carrier injected from the second emitter layer 5 reaches the depletion layer of the main junction part, the carrier of opposite sign injected from the first emitter layer 1 reaches said depletion layer almost simultaneously, and the rise time of the thyristor can be cut down remarkably.
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