| 摘要 |
PURPOSE:To make it possible to form a large memory capacitor in a very small area by a method wherein the surface area of the capacitor is made larger utilizing the side wall of the groove cut on a silicon substrate, the prescribed two capacitors are formed and used in parallel, and the first polysilicon electrode is self-matchingly connected without using a contact hole. CONSTITUTION:The first capacitor is formed on the lower layer of the first polysilicon electrodes 22a and 22b between said lower layer and a silicon substrate 1 in the internal part of the grooves 11a and 11b formed on the surface of the semiconductor substrate 1. Also, the second capacitor is formed on the upper layer of the first polysilicon electrodes 22a and 22b between said upper layer and the second polysilicon electrode 5. The first polysilicon electrodes 22a and 22b are used as a memory terminal, and it is self-matchingly connected to a read-out and write-in transistor AT without using a contact hole 8. Accordingly, the two capacitors act in parallel, a sufficient memory capacity can be obtained, and also as the memory terminal 22 is separated from the substrate 1, a structure which is strong against the leak and the soft error generating between the adjoining memory cells can be obtained. |
