发明名称 Power semiconductor module
摘要 A power semiconductor module including a cascade circuit of a low-voltage high-current MOSFET and of a bipolar semiconductor element, for example a field-controlled thyristor, GTO thyristor or Darlington transistor, as a hybrid combination. In this manner, it is possible to achieve a construction, which exhibits low induction and which saves space and which at the same time permits efficient cooling of the module.
申请公布号 US4768075(A) 申请公布日期 1988.08.30
申请号 US19860924739 申请日期 1986.10.30
申请人 BBC BROWN, BOVERI & COMPANY, LIMITED 发明人 BROICH, BRUNO;GOBRECHT, JENS;ROGGWILLER, PETER
分类号 H01L23/32;H01L21/8249;H01L25/18;H01L27/06;(IPC1-7):H01L25/08 主分类号 H01L23/32
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