发明名称 |
Power semiconductor module |
摘要 |
A power semiconductor module including a cascade circuit of a low-voltage high-current MOSFET and of a bipolar semiconductor element, for example a field-controlled thyristor, GTO thyristor or Darlington transistor, as a hybrid combination. In this manner, it is possible to achieve a construction, which exhibits low induction and which saves space and which at the same time permits efficient cooling of the module.
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申请公布号 |
US4768075(A) |
申请公布日期 |
1988.08.30 |
申请号 |
US19860924739 |
申请日期 |
1986.10.30 |
申请人 |
BBC BROWN, BOVERI & COMPANY, LIMITED |
发明人 |
BROICH, BRUNO;GOBRECHT, JENS;ROGGWILLER, PETER |
分类号 |
H01L23/32;H01L21/8249;H01L25/18;H01L27/06;(IPC1-7):H01L25/08 |
主分类号 |
H01L23/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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