发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To simply perform various kinds of tests in a short time by providing a coincidence detection circuit to detect a coincidence between the output of a data register and the output of sense amplifier. CONSTITUTION:The coincidence detection circuit 12, which detects the coincidence between the output of the sense amplifier 1 of a RAM port and the data register 7 of an SAM (serial access memory) port, is provided, and a coincidence detection sense line 13 is connected to columns, arrayed in one line, in common. When the sense amplifier 1 is activated and the data of the RAM port is amplified, the coincidence between the RAM data of nodes N2, N4 and the SAM data of the nodes N3, N5, is detected. Thus, the transferring function between the RAM and the SAM can be simply checked. Besides, in the test of the RAM part simple as well, by storing a test data in the data register 7, the same row can be tested simultaneously.
申请公布号 JPS63209096(A) 申请公布日期 1988.08.30
申请号 JP19870041839 申请日期 1987.02.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARIMOTO KAZUTAMI
分类号 G11C29/00;G11C11/34;G11C11/401;G11C11/409;G11C29/34;H01L27/10 主分类号 G11C29/00
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