发明名称 LOW PERMITTIVITY INSULATOR SUBSTRATE
摘要 PURPOSE:To reduce permittivity, to enhance volumetric intrinsic resistance, to be adapted for a multilayered structure and high density mounting by forming the title substrate of an insulating material having many fine holes, and setting the porosity of the material at 25-70 vol.%. CONSTITUTION:A substrate is formed of an insulating material having many fine holes 2 and the porosity of the material is set at 25-70 vol.%. The mean diameter of the hole 2 is 3-30mum, and glass 4 or resin 3 is filled near the surface of the substrate 1 of the holes 2 or all the holes 2. Since such a porosity is provided, it becomes of low permittivity, hard to generate a floating capacity, rapid signal transmission speed, and high volumetric intrinsic resistance. Thus, the substrate adapted for a multilayered structure and a high density can be obtained.
申请公布号 JPS63209150(A) 申请公布日期 1988.08.30
申请号 JP19870043557 申请日期 1987.02.25
申请人 MURATA MFG CO LTD 发明人 BANDAI HARUFUMI;SUGO KIMIHIDE;TSUKAMOTO WAKICHI
分类号 C04B38/00;H01L23/14;H01L23/15;H05K1/03 主分类号 C04B38/00
代理机构 代理人
主权项
地址