| 摘要 |
PURPOSE:To make it possible to form a large memory capacity in a small area by a method wherein two capacitors, having a silicon substrate and the second polysilicon electrode as opposed electrodes, are formed on the upper and the lower parts of the memory terminal consisting of the first polysilicon electrode, and they are used in parallel. CONSTITUTION:The first capacitor is formed on the lower layer of the first polysilicon electrode 22 pinching the first capacitor insulating film 4 between said lower layer and a silicon substrate 1. Also, the second capacitor is formed on the upper layer of the first polysilicon electrode 22 pinching the capacitor insulating film 24 between said upper layer and the second polysilicon electrode 5. The above-mentioned two capacitors are connected to a read-out and write-in transistor AT using the first polysilicon electrode 22 as a memory terminal. Accordingly, the two capacitors act in parallel, and as the memory terminal 22 is separated from the substrate 1, a structure which is strong against the leak and the soft error generating between the adjoining memory cells can be obtained. |
