| 摘要 |
PURPOSE:To obtain uniform deposition rates over the whole regions of substrate by providing a rotating means which rotates a flow regulator and a susceptor in one piece. CONSTITUTION:Because gaps between substrates 3 and a flow regulator 8 are gradually narrowed toward the downstream of gas flow, the decline of a reaction speed caused by consumption of raw gas and growth of concentration boundary layers can be compensated so that uniform deposition rates along the flow direction can be obtained. Also, because the distances l between the substrates 3 and the flow regulator 8 are kept constant, the excellent uniformity along the direction perpendicular to the flow can be obtained. Further, concerning the asymmetry of the flow, nonuniformity of the deposition rates between the substrates is eliminated by rotating the susceptor 2 and the flow regulator 8 in one piece. Thus, both the uniformity in one substrate and the uniformity between the substrates can be achieved by rotating the susceptor 2 and the flow regulator 8 which has planes parallel to the substrates 3 in the horizontal direction simultaneously in one piece.
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