| 摘要 |
PURPOSE:To prevent the growth of granules from a polycrystalline silicon film region at the side wall surface of a groove, by using both selective epitaxial growing and non-selective epitaxial growing, performing sequential lamination, and obtaining an intended structure. CONSTITUTION:An insulating film 2 is formed on one main surface of a single- crystal semiconductor substrate 1. A specified groove 4 is formed in the insulating film 2. One main surface is exposed. A first single-crystal semiconductor layer 5 is formed in the groove by a selective epitaxial growing method. A second single-crystal semiconductor 13 is formed on the first single-crystal semiconductor layer 5 by an epitaxial growing method. A polycrystalline semiconductor layer 6 is formed on the insulating film 2. In this way, it is not necessary to perform the selective epitaxial growing under the state a polycrystalline silicon intermediate layer is present as in a conventional method. A problem of impairment of the quality of a single-crystal silicon region due to the growth of granules from the polycrystalline silicon can be solved.
|
