| 摘要 |
PURPOSE:To decrease the parasitic resistance in an ohmic region and to obtain a transistor without a short channel effect, by selectively forming a material, which has a thermal expansion coefficient different from that of the semiconductor material of a substrate on a semiconductor region, thereby forming a disordererd region at a heterojunction. CONSTITUTION:A material 6, whose thermal expansion coefficient is remarkably different from that of a GaAs substrate 1, is formed on a semiconductor layer having a heterojunction. When heat treatment is applied, thermal strain is yielded on the substrate 1. Then Al is diffused, and a heterogeneous interface is disordered. Thus a selective disordered state is obtained. Since ions are not implanted, Si is hardly diffused. Parasitic resistance is decreased, and a transistor with less short channel effect can be manufactured.
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