| 摘要 |
PURPOSE:To decrease the occurrence rates of initial leaking defects between an emitter and a base and leaking defects after a pellet has been attached and to improve the yield rate, by providing a spacer in an emitter diffused window hole, thereby securing an interval between the emitter and the base. CONSTITUTION:A p-type region 2 is formed on the surface of a semiconductor substrate 1 as a base. An n<+> type diffused region 9 is formed at a part of the surface of the p-type region 2 as an emitter. A side wall 8 comprising an insulating film is formed on the inside of a surface oxide film 5, which is used for the n<+> type diffused region 9. After the washing with etching liquid, an ohmic- connected electrode 10 is provided on an n<+> region, which is surrounded with said insulating film, by a self-aligning pattern. In this way, the side wall 8 of the insulating film becomes a spacer. An emitter hole is not expanded in preceding washing before photoetching of the emitter. Leaking between the emitter and the base is prevented and the yield rate of a washed emitter type semiconductor device is improved.
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