| 摘要 |
PURPOSE:To decrease capacitance between wiring layers and coupling capacitance between wirings, to implement high speed in a semiconductor circuit and to improve integration density, by forming interlayer insulating films with a composite films including a porous organic insulating film having bead shaped cavity holes. CONSTITUTION:Interlayer insulating films are formed with composite films of inorganic films 4 and 6 including a porous organic insulating films with bead shaped cavity holes. The composite films are formed at least in three layers or more with an intermediate layer and the silicon wiring films 4 and 6 or other inorganic insulating films comprising nitride films. Said intermediate layer is the porous organic insulating film with the bead shaped cavity holes, which is formed so as to fill only a step part between the wirings other than the upper surface of an aluminum wiring 3. The dielectric constant of the porous organic insulating film 5 with bead shaped cavity holes forming the intermediate layer of the interlayer insulating films is about 2, which is far smaller than that of any conventional film. Therefore, an interlayer capacitance of wirings Co1 and a coupling capacitance Co2 between the wirings in the same layer can be reduced to 1/2-1/4 the conventional values, respectively. The operating speed of a semiconductor electronic circuit is made high, and the integration density is improved.
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