发明名称 PLASMA TREATMENT APPARATUS
摘要 PURPOSE:To restore electronic damages in a plasma treatment apparatus with a radio frequency electric field application means by providing a light application means which applies a light of an ultraviolet range wavelength to wafers. CONSTITUTION:After a boat 15 holding wafers 14 is inserted into a chamber 11, gas in the chamber 11 is evacuated through an exhaust tube 13 to provide a high vacuum state. While keeping the high vacuum state, oxygen gas, for instance, is supplied into the chamber 11 from a reactive gas supply tube 12. The oxygen gas is decomposed by a radio frequency electric field applied between radio frequency electrodes 16a and 16b to form a plasma. Moreover, lights of ultraviolet range wavelength are applied to the wafers by light application means 18a and 18b while the plasma is formed. A part of the oxygen gas is decomposed by the light application. Resist on the wafers 14 is ashed by the reaction between the resist and oxygen radicals in the formed plasma and removed. Therefore, electronic damages caused by the application of the radio frequency electric field can be restored by the application of the light of the ultraviolet range wavelength.
申请公布号 JPS63208221(A) 申请公布日期 1988.08.29
申请号 JP19870040255 申请日期 1987.02.25
申请人 HITACHI LTD 发明人 KATO HISAYUKI
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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