| 摘要 |
PURPOSE:To prevent the reduction of a maximum read signal electric charge quantity to improve the reliability by providing a semiconductor substrate with a photoelectric conversion area and an electric charge transfer area and applying <=2.5V positive voltage to an optical shield electrode to drive a charged coupled device which has the optical shield electrode on a part other than the photoelectric conversion area of the semiconductor substrate. CONSTITUTION:A positive voltage VP.S 9 is applied to a shield electrode 6 to operate the charge coupled device, and this applied voltage VP.S 9 is set to <=2.5V positive voltage. In this state, floating electric charges 8 in an insulating film 4 are gathered in the vicinity of the boundary between end parts of a photoelectric conversion area 2 and the optical shield electrode 6. Therefore, the potential just under a gate area 15 of a vertical shift register electrode 5 is not varied. Thus, a potential barrier is not generated under the gate area 15 and the signal electric charges stored in the photoelectric conversion area 2 are completely read out.
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