| 摘要 |
PURPOSE:To enhance recording stability and recording level and to prevent generation of defective initialization and partial erasing by forming a recording layer of an alloy having a specific compsn. CONSTITUTION:This recording medium has a substrate 11 and the recording layer 13 on which information is recorded and erased by the phase transition taking place between different crystal phases when a light beam is projected thereon. The recording layer 13 is formed of the alloy having the compsn. expressed by the general formula In50-xSb50-xMx, where M is the element belonging to group IVB of periodic table, (x) is larger than 0 and below 15atom.%. The alloy of the recording layer 13 separates to In50-xSb50-x and InxMx when irradiated with a light beam. InxMx exists in the state being dispersed in the stably crystalline In50-xSb50-x and since the InxMx is stable in the amorphous state, the stability of recording is high. In addition, the high recording level is obtd. and the defective initialization and partial erasing are suppressed. |
