| 摘要 |
PURPOSE:To improve the degree of integration of a semiconductor integrated circuit device easily by coating the side surface of a conductive substance layer, the upper surface of a first insulating film and a surface, from which the conductive substance layer is removed selectively, with a second insulating film and uniformly getting rid of the second insulating film. CONSTITUTION:An insulating element-isolation region 102 is formed to the surface of an silicon semiconductor substarte 101, and an insulating film 105 is shaped so as to be applied onto the upper surface of a gate electrode 104 formed onto a gate insulating film 103 for an insulated gate field-effect transistor. An N<+> diffusion region 109 is shaped through the implantation of arsenic ions, an insulating film 106 is formed so as to be applied onto the side surface of the gate electrode 104, an insulating film 107 different from the insulating film 105 and the insulating film 106 by boring a window, and a wiring 108 is shaped. Consequently, the diffusion region 109 for a source and a drain and the wiring 108 are connected electrically, employing the insulating films 105, 106, 107 as interlayer insulating films. Lastly, a protective film 110 is applied, thus constituting a semiconductor element with a self-alignment type opening section. Accordingly, density can be increased.
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