发明名称 Integrated circuit in I<2>L technology
摘要 The invention relates to bipolar integrated circuits in I&lt;2&gt;L technology. In order to regulate the output current from the logic gates when they are rendered conducting, there is provided a circuit for slaving the supply potential for the injectors of the gates. The circuit comprises an additional gate PO which is both supplied by this potential and serves to modify this potential as a function of a comparison between the output current from the gate and a reference current SC. It is thus possible to envisage analogue applications for I&lt;2&gt;L technology. A digital-analogue converter is described by way of example. &lt;IMAGE&gt;
申请公布号 FR2611331(A1) 申请公布日期 1988.08.26
申请号 FR19870002211 申请日期 1987.02.20
申请人 THOMSON SEMICONDUCTEURS 发明人 P. DOUZIECH ET P. BERGER;BERGER P
分类号 G05F3/22;(IPC1-7):H03K19/091;H03M1/74 主分类号 G05F3/22
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