发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To form an opening section with an upper taper into an insulating film under the state, in which the whole surface is purified, positioning a diffuse transmitting body into an optical path reaching to an opening section in a semiconductor chip from a light source for laser light and etching the diffuse transmitting body. CONSTITUTION:The layer of a material having an etching rate slower than an insulating film is deposited onto the insulating film, and an opening section 6 is shaped and used as a mask. The board of an optical diffusing body, the plane of incidence of light of which is flattened and the plane of outgoing of which has fine irregularities, is positioned to the upper section of the mask, laser lights 8a are applied from an upper section, the insulating film is etched in an isotropic manner up to approximately half of thickness thereof, the residual insulating film in the opening section 6 is etched in an anisotropic manner with the exception of the optical diffusing body, and a conductor layer under the insulating film is exposed. The mask is removed, the insulating film is gotten rid of through etching from the surface until the thickness of the insulating film etched in the isotropic manner is reduced by approximately half, and an upper layer wiring being connected to the conductor layer and extending on the insulating film is formed. Accordingly, the opening section with a tapered section can be shaped into the insulating film under the state in which the whole surface is purified.
申请公布号 JPS63207151(A) 申请公布日期 1988.08.26
申请号 JP19870040712 申请日期 1987.02.23
申请人 NEC CORP 发明人 NAKANO HIDEKAZU
分类号 H01L21/302;H01L21/3065;H01L21/3205 主分类号 H01L21/302
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