发明名称 CRYSTAL GROWTH APPARATUS
摘要 PURPOSE:To manufacture an epitaxial crystal having a uniform film thickness and composition ratio by inclining a flange on the reaction tube side in coincidence with the slope of the opening of the tube, and attaching the tube. CONSTITUTION:A reaction tube side flange 16 is clamped on a flat surface determined by nuts 17 engaged by three bolts 12-14. The flange 16 is inclined in coincidence with the slope of the opening of a reaction tube 1 in the clamped state, and the tube 1 and the flange 16 are sealed. Accordingly, steam and oxygen, etc. in the atmosphere are not invaded into the tube during the crystal growth. Since the flange 16 is supported to a closing mechanism side flange 5, the weights of the flange 16 and bellows 15 are not applied to the tube, and the damage of the tube 1 does not possibly occur. Further, since the center axis of a heating furnace completely coincides with that of the tube, a temperature distribution as designed is obtained in the tube 1 during the crystal growth. Thus, the film thickness and the composition ratio of the epitaxial crystal can be made uniform.
申请公布号 JPS63207124(A) 申请公布日期 1988.08.26
申请号 JP19870041799 申请日期 1987.02.24
申请人 RES DEV CORP OF JAPAN;SUMITOMO ELECTRIC IND LTD 发明人 YAMAZOE YOSHIMITSU;TAKAHASHI MITSUO
分类号 H01L21/208 主分类号 H01L21/208
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