| 摘要 |
PURPOSE:To reduce fine particles adhered to a semiconductor substrate by using an ultrasonic waves simultaneously when the substrate is treated with fluoric acid or a mixture solution containing the fluoric acid. CONSTITUTION:When a semiconductor substrate is dipped in fluoric acid or mixture solution containing the fluoric acid to process the substrate, it can prevent fine particles from being adhered to the substrate surface during processing by using in combination with an ultrasonic wave. That is, it is, for example, processed for 5 min. by using a processing method using in combination with an ultrasonic wave by generating the wave of 28kHz, 100W in a processing solution for dipping the substrate, and the substrate is thereafter rinsed with pure water for 10min. Thus, the adhered particles on the substrate are reduced to maintain it in a clean state.
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