| 摘要 |
PURPOSE:To speed up initialization and erasing of record by forming a recording layer of an alloy having a specific compsn. CONSTITUTION:This recording medium has a substrate 11 and the recording layer 13 on which information is recorded and erased by the phase transition taking place between different crystal phases when a light beam is projected thereon. The recording layer 13 is formed of the alloy having the compsn. expressed by In50-xSb50-xM2x, where M is the element having the crystallization temp. lower than the crystallization temp. of Sb, (x) is larger than 0 and below 5atom.%. Since the element having the crystallization temp. lower than the crystallization temp. of Sb is used as M, the crystallization rate and phase transition rate of M2x by the projection of the light beam is increased to the rates higher than in the case of Sb. The initialization and erasing are thereby speeded up. |
