| 摘要 |
PURPOSE:To suppress the leakage during the injection of a high electric current and to improve the temperature dependence of a threshold electric current by a method wherein a clad layer under an active layer is used as a high- resistance electric-current blocking layer except a part directly under the active layer. CONSTITUTION:First clad layers 12a, 12b of n-type InP, an InGaAsP active layer 13 and a second clad layer 14 of p-type InP are grown in succession; after that, this assembly is etched selectively; a mesa stripe reaching the first clad layers 12a, 12b is formed. Then, the mesa stripe region is removed; protons are irradiated; the part 12b out of the first clad layers is made electrically semiinsulating and highly resistant so as to form an electric-current blocking layer. In succession, a third clad layer 15 of p-type InP and a p-type InGaAsP cap layer 16 are formed in succession. By this setup, an electric current is concentrated at the active layer during the injection of the high electric current, and the leakage of the electric current is suppressed. In addition, the temperature dependence of a threshold electric-current value is improved. |
