| 摘要 |
<p>A laser structure with highly p-doped active material which has a particularly low linewidth enhancement factor α. Hence the emission linewidth of the laser structure (1) is relatively small. The structure (1) shows a particular relationship between the photon energy (E), the band gap energy (Eg) and the conduction band quasi Fermi level (Efc) of the active material which minimizes α, the valence band being degenerate. These conditions can be used to design low α laser structures. Structures according to embodiments of the invention are of particular application to directly modulated lasers or absorption modulators and also find application in coherent optical detection.</p> |
