| 摘要 |
PURPOSE:To enable the production of a GaAs crystal having decreased Si concentration, by applying a specific oxide film to the inner surface of a quartz crucible for holding Ga in the crystal growth of GaAs, thereby easily preventing the reaction of Ga with the crucible. CONSTITUTION:The inner surface of the objective quartz crucible for holding at least Ga in the crystal growth of GaAs is coated with an oxide film which is solid at room temperature-1,500 deg.C and has a free energy lower than the free energy to form Ga2O3. The oxide used as the coating material is Cr2O3, Al2O3, HfO2, La2O3, Sm2O3, Ta2O5, ThO2 or ZrO2. The Si concentration in the polycrystalline GaAs produced by using the crucible for forming a GaAs melt is below the detectable limit of secondary ion mass spectrometry, i.e. <=3X10<14>cm<-2> and is lower than 1/10 of the Si concentration attained by using conventional crucible.
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