发明名称 SIC-BASE MIRROR
摘要 PURPOSE:To obtain a good reflectivity and scattering ratio by forming a titled mirror in such a manner that free carbon is not substantially admitted in Raman spectra using argon as an excitation source and ratio of Si:C is specified substantially to 1:1. CONSTITUTION:A member constituted by forming an SiC film 2 on a base material 1 is so formed that the free carbon is not substantially admitted in the Raman spectra of the laser using the argon as the excitation source and the ratio of Si:C is specified substantially to 1:1. More preferably, the crystal grain size is specified to <=10mum. The mirror is the film which does not contain the free carbon and has the high crystallinity of 1:1 in Si:C in such a manner and since the crystal is as fine as <=10mum, the polishing thereof is extremely easy and the good final finish is obtd. The good reflectivity and scattering ratio are thereby obtd.
申请公布号 JPS63205603(A) 申请公布日期 1988.08.25
申请号 JP19870037597 申请日期 1987.02.20
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 EBATA MAKOTO;ANDO MASAMI;KAYANE MIHARU
分类号 G02B5/08;C23C16/32 主分类号 G02B5/08
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