| 摘要 |
PURPOSE:To carry out the growth of a high-purity GaAs single crystal free from contamination with Si from a quartz boat, by using a quartz boat in a two-step GaAs single crystal growth process comprising the direct synthesis of polycrystalline GaAs from Ga and As in a quartz boat and the growth of a GaAs single crystal from the polycrystalline GaAs grown in the quartz boat. CONSTITUTION:A polycrystalline GaAs 7 is grown by the direct synthesis from Ga 2 and As 9 in a quartz boat 3 and the top and tail parts of the polycrystalline GaAs are cut off. The remaining part of the polycrystalline GaAs is melted and a GaAs single crystal is grown from the melt. In the above two-step growth of a GaAs single crystal, the growth of a polycrystalline GaAs by the direct synthesis from Ga and As is carried out by using a quartz boat having a solid oxide film (e.g. Cr2O3 film 1) on the inner surface. The free energy of the solid oxide film is lower than the free energy to form Ga2O3 within a temperature range between room temperature and 1,500 deg.C.
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