| 摘要 |
PURPOSE:To make it possible to form a pattern of a submicron line width by a method wherein a side etching is generated in a layer to be etched in the case of selective etching and with a substance film different from a second substance film deposited to remove the second substance film, a substance film deposited on the second substance film is removed. CONSTITUTION:An SiO2 film 2 and a resist film 3 are formed on a semiconduc tor substrate 1 and thereafter, a pattern is formed on the film 3 and the film 2 is selectively etched using the pattern of the film 3 as a mask. In this case, the etching time is adjusted to etch the film 2 to the lateral direction as well and a prescribed side etching is generated. After that, the film 3 is removed after an SiO2 deposited film 4 is formed. At the same time as the resist 3 is formed, the deposited film 4 on the film 3 is also removed to obtain a pattern section. Thereby, a groove pattern consisting of the SiO2 film and of a width of 0.5 mum or less can be easily formed.
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