| 摘要 |
<p>PURPOSE:To speed up writing in a memory cell by connecting a selecting transistor(TR) with a memory TR in series and connecting a boosting capacitor between both TRs. CONSTITUTION:The capacitor CO is arranged in the memory cell and one electrode of the capacitor CO is connected to a node 6 between the drain electrode of the memory TR Q2 and the source electrode of the selecting TR Q1. When a pulse is impressed to the other terminal of the boosting capacitor CO in the memory cell, the drain potential of the TR Q2 is raised by capacitance coupling. Thereby, a boosting circuit for generating a high voltage is not required and a clock to be inputted can be satisfied only by one cycle, so that rapid writing can be attained.</p> |
