| 摘要 |
PURPOSE:To enable TAT to be shortened by a method wherein the checking processes of misalignment of masking as well as the requirements for exposure and development are performed using a specified check pattern in the same position. CONSTITUTION:During the checking process of misalignment of masking, the checking processes of misalignment as well as the requirements for exposure and development are to be performed using a specified check pattern arranged in the same position. In other words, when the length l1 of pedestal patterns 1, 2 is specified to be equivalent to the design dimension of mask applied to form resist patterns 11, the requirements for exposure and development can be judged to be adequate if l1=l11 comparing the length l11 of resist pattern 11 with the length l1 while to be inadequate if l1 and l11 are markedly different from each other. |
