| 摘要 |
<p>A MOS field effect transistor comprising a drain region (11 , 12) of one conductivity type, a plurality of base regions (13, 13') of the other conductivity type formed in a surface portion of the drain region (11, 12) in a matrix configuration having rows and columns, a plurality of source regions (14) of the one conductivity type formed in the base regions, a plurality of auxiliary regions (1 of the other conductivity type formed in the exposed surface portion of said drain region (11, 12) at crossing points of the rows and columns of the base region matrix, a mesh-shaped gate electrode (15) formed on the peripheral part of the base regions (13, 13') and the exposed portion of said drain region (11, 12) so as to cover the auxiliary regions (1, a source electrode (17) contacting at least the source regions (14) and a drain electrode (19) contacting the back surface of the drain region (11, 12).</p> |
