| 摘要 |
PURPOSE:To prevent a mask pattern from deformation by a method wherein the pattern formation comprises a patterning process of a film to be etched using a mask laminated with a spin-on-glass layer as well as a simultaneously removing process of this spin-on-glass layer and a resist layer. CONSTITUTION:A film 2 to be etched is coated with spin-on-glass to form a spin-on-glass layer 3 and then a resist layer 4 is formed on the spin-on-layer 3 so that the resist layer 4 may not be formed directly on the film 2 to be etched. Thus, the ruggedness on the surface of resist layer 4 can be decreased by means of laying the spin-on-glass layer 3 between the film 2 and the layer 4 even if the film 2 is subjected to notable ruggedness. Through these procesures, a notably rugged film to be etched can be patterned subject to less deformation.
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