发明名称 |
METHOD OF MANUFACTURE FOR SEMICONDUCTOR ACCELEROMETER |
摘要 |
An improved method of manufacturing a semiconductor accelerometer having a cantilevered beam is shown. In the fabricating process a semiconductor substrate is divided into p-type regions and n-type regions. The substrate is immersed into an electrochemical solution with a cathode and a suitable voltage is applied. Certain portions of the substate are protected from the etching by the voltage such that the semiconductor substrate is etched to form the cantilevered beam. |
申请公布号 |
EP0178662(A3) |
申请公布日期 |
1988.08.24 |
申请号 |
EP19850113191 |
申请日期 |
1985.10.17 |
申请人 |
NISSAN MOTOR CO., LTD. |
发明人 |
MURAKAMI, KOICHI |
分类号 |
F16C11/12;G01P15/08;G01P15/12;G01P15/125;H01L21/3063;H01L29/84 |
主分类号 |
F16C11/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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