发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To prevent a data reading speed from being dropped by constituting the source areas of two memory cells adjacent to each other in a 1st direction of independent 2nd conductive diffusion areas, connecting earth wires to the areas and forming an erasing gate wiring between both the areas so as to extend in a 2nd direction. CONSTITUTION:The source areas of two memory cells adjacent to each other in the 1st direction are independently constituted of respective 2nd conductive diffusion areas 11 and the erasing gate wiring 15 connected to an erasing gate electrode of one memory cell out of two is formed between respective areas 11 so as to be extended in the 2nd direction. The source areas 11 are prevented from intersecting with erasing gate wirings 15. Further, an earth wiring 21 is connected to each area 11. Consequently, the source area of each memory cell is connected to the earth wiring 21 by the minimum distance. Thereby, the production process can be simplified, and since a channel current at the time of reading out data is increased, the data reading speed can be prevented from being dropped.</p>
申请公布号 JPS63204599(A) 申请公布日期 1988.08.24
申请号 JP19870037072 申请日期 1987.02.20
申请人 TOSHIBA CORP 发明人 YOKOYAMA SADAYUKI;NAKAGAWA KAORU
分类号 G11C17/00;G11C16/04;G11C16/06;G11C16/14;H01L21/8247;H01L27/115 主分类号 G11C17/00
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